MOSFET Infineon, N-Canal IRF1404LPBF, VDSS 40 V, ID 162 A, I2PAK (TO-262), Mejora de 3 pines, 1, config. Simple

Código RS:: 543-0822
Referência do fabricante:: IRF1404LPBF
Fabricante:: Infineon

MOSFET Infineon, N-Canal IRF1404LPBF, VDSS 40 V, ID 162 A, I2PAK (TO-262), Mejora de 3 pines, 1, config. Simple

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Código RS:: 543-0822
Referência do fabricante:: IRF1404LPBF
Fabricante:: Infineon

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Selecionar tudo	Atributo	Valor
	Marca	Infineon
	Tipo de producto	MOSFET
	Tipo de canal	N
	Tensión máxima Drenador-Fuente (Vds)	40 V
	Corriente continua máxima de drenaje (ld)	162 A
	Encapsulado	I2PAK (TO-262)
	Modo de canal	Mejora
	Número de pines	3
	Número de elementos por chip	1
	Configuración de transistor	Simple
	Tensión directa (Vf)	1.3 V
	Altura	9.65 mm
	Longitud	10.67 mm
	Resistencia máxima Drenador-Fuente (Rds)	4 mΩ
	Tensión máxima de la fuente de la puerta	20 V, -20 V
	Temperatura de funcionamiento máxima	175 °C
	Disipación de potencia máxima (Pd)	3.8 W
	Temperatura de Funcionamiento Mínima	-55 °C
	Tipo de montaje	Orificio pasante
	Serie	HEXFET
	Anchura	4.83 mm

	Selecionar tudo
	Marca Infineon
	Tipo de producto MOSFET
	Tipo de canal N
	Tensión máxima Drenador-Fuente (Vds) 40 V
	Corriente continua máxima de drenaje (ld) 162 A
	Encapsulado I2PAK (TO-262)
	Modo de canal Mejora
	Número de pines 3
	Número de elementos por chip 1
	Configuración de transistor Simple
	Tensión directa (Vf) 1.3 V
	Altura 9.65 mm
	Longitud 10.67 mm
	Resistencia máxima Drenador-Fuente (Rds) 4 mΩ
	Tensión máxima de la fuente de la puerta 20 V, -20 V
	Temperatura de funcionamiento máxima 175 °C
	Disipación de potencia máxima (Pd) 3.8 W
	Temperatura de Funcionamiento Mínima -55 °C
	Tipo de montaje Orificio pasante
	Serie HEXFET
	Anchura 4.83 mm

Infineon HEXFET Series MOSFET, 162A Maximum Continuous Drain Current, 3.8W Maximum Power Dissipation - IRF1404LPBF

This MOSFET provides an efficient solution in various electronic applications, particularly where high performance is essential. Its Advanced processing techniques make it suitable for automation and electronic control systems, contributing to modern power management devices.

Features & Benefits

• Delivers a continuous drain current of 162A for robust performance

• Withstands a maximum drain-source voltage of 40V for safe operation

• Exhibits low on-resistance (RDS(on)) of 4 mΩ, enhancing energy efficiency

• Utilises enhancement mode technology for improved switching performance

• Supports through-hole mounting, facilitating integration into existing designs

Applications

• Used in high current circuits for power regulation

• Suitable for power supply designs in industrial automation

• Applied in electric motor drives and control systems

• Ideal for DC-DC converters in renewable energy systems

What is the maximum power dissipation capability?

It can handle power dissipation up to 3.8W under specific conditions, ensuring optimal performance without overheating during operation.

Is it compatible with surface mount designs?

While primarily in the I2PAK package for through-hole applications, it can be integrated into other industrial designs requiring robust components.

How should it be mounted for optimal performance?

Follow proper through-hole mounting techniques to ensure secure soldering, preventing thermal and mechanical failures during operation.

What are the implications of exceeding the specified limits?

Exceeding the continuous drain current or voltage limits may cause thermal overload or permanent damage to the device, affecting overall system reliability.

Can this component be reused after installation?

Reinstallation is possible if careful removal techniques are employed, though repeated thermal cycling may impact long-term reliability.