IGBT, FGH75T65SQDNL4, P-Canal, 200 A, 650 V, TO-247, 4-Pines, 1MHZ 1 Simple

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Opções de embalagem:
Código RS:
181-1929
Referência do fabricante:
FGH75T65SQDNL4
Fabricante:
onsemi
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Marca

onsemi

Corriente Máxima Continua del Colector

200 A

Tensión Máxima Colector-Emisor

650 V

Tensión Máxima Puerta-Emisor

±20V

Disipación de Potencia Máxima

375 W

Número de transistores

1

Tipo de Encapsulado

TO-247

Tipo de Montaje

Montaje en orificio pasante

Tipo de Canal

P

Conteo de Pines

4

Velocidad de Conmutación

1MHZ

Configuración de transistor

Simple

Dimensiones

15.8 x 5.2 x 22.74mm

Temperatura Máxima de Funcionamiento

+175 °C

Capacitancia de puerta

5100pF

Temperatura de Funcionamiento Mínima

-55 °C

Energía nominal

160mJ

COO (País de Origem):
CN
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop IV Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO−247−4L package that provides significant reduction in Eon Losses compared to standard TO−247−3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Improved Gate Control Lowers Switching Losses
Separate Emitter Drive Pin
TO-247-4L for Minimal Eon Losses
Optimized for High Speed Switching
These are Pb-Free Devices
Solar Inverter
Uninterruptible Power Inverter Supplies
Neutral Point Clamp Topology

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