Memoria flash, Paralelo W29N04GVBIAF 4Gbit, 512M x 8 bit, 25μs, VFBGA, 63 pines
- Código RS:
- 188-2878P
- Referência do fabricante:
- W29N04GVBIAF
- Fabricante:
- Winbond
37 Disponível para entrega em 4 dia(s) útil(eis).
Preço Unidade (fornecido em bandeja)
5,73 €
| Unidades | Por unidade |
| 1 + | 5,73 € |
- Código RS:
- 188-2878P
- Referência do fabricante:
- W29N04GVBIAF
- Fabricante:
- Winbond
- COO (País de Origem):
- TW
Density : 4Gbit (Single chip solution)
Vcc : 2.7V to 3.6V
Bus width : x8
Operating temperature
Industrial: -40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 4G-bit/512M-byte
Page size
2,112 bytes (2048 + 64 bytes)
Block size
64 pages (128K + 4K bytes)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command set
Additional command support
Sequential Cache Read
Random Cache Read
Cache Program
Copy Back
Two-plane operation
Contact Winbond for OTP feature
Contact Winbond for Block Lock feature
Lowest power consumption
Read: 25mA(typ.)
Program/Erase: 25mA(typ.)
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
63-ball VFBGA
Vcc : 2.7V to 3.6V
Bus width : x8
Operating temperature
Industrial: -40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 4G-bit/512M-byte
Page size
2,112 bytes (2048 + 64 bytes)
Block size
64 pages (128K + 4K bytes)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command set
Additional command support
Sequential Cache Read
Random Cache Read
Cache Program
Copy Back
Two-plane operation
Contact Winbond for OTP feature
Contact Winbond for Block Lock feature
Lowest power consumption
Read: 25mA(typ.)
Program/Erase: 25mA(typ.)
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
63-ball VFBGA
4Gb SLC NAND Flash Memory with uniform 2KB+64B page size.
Bus Width: x8
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
Support OTP Memory Area
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
Support OTP Memory Area
Atributo | Valor |
|---|---|
| Tamaño de la Memoria | 4Gbit |
| Tipo de Interfaz | Paralelo |
| Tipo de Encapsulado | VFBGA |
| Conteo de Pines | 63 |
| Organización | 512M x 8 bit |
| Tipo de Montaje | Montaje superficial |
| Tipo de Célula | SLC NAND |
| Tensión de Alimentación de Funcionamiento Mínima | 2.7 V |
| Tensión de Alimentación Máxima de Funcionamiento | 3.6 V |
| Longitud | 11.1mm |
| Altura | 0.6mm |
| Ancho | 9.1mm |
| Dimensiones | 11.1 x 9.1 x 0.6mm |
| Temperatura de Funcionamiento Mínima | -40 °C |
| Tiempo de Acceso Aleatorio Máximo | 25µs |
| Número de Bits de Palabra | 8bit |
| Temperatura Máxima de Funcionamiento | +85 °C |
| Número de Palabras | 512M |
| Serie | W29N |
- Código RS:
- 188-2878P
- Referência do fabricante:
- W29N04GVBIAF
- Fabricante:
- Winbond
- COO (País de Origem):
- TW
Density : 4Gbit (Single chip solution)
Vcc : 2.7V to 3.6V
Bus width : x8
Operating temperature
Industrial: -40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 4G-bit/512M-byte
Page size
2,112 bytes (2048 + 64 bytes)
Block size
64 pages (128K + 4K bytes)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command set
Additional command support
Sequential Cache Read
Random Cache Read
Cache Program
Copy Back
Two-plane operation
Contact Winbond for OTP feature
Contact Winbond for Block Lock feature
Lowest power consumption
Read: 25mA(typ.)
Program/Erase: 25mA(typ.)
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
63-ball VFBGA
Vcc : 2.7V to 3.6V
Bus width : x8
Operating temperature
Industrial: -40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 4G-bit/512M-byte
Page size
2,112 bytes (2048 + 64 bytes)
Block size
64 pages (128K + 4K bytes)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command set
Additional command support
Sequential Cache Read
Random Cache Read
Cache Program
Copy Back
Two-plane operation
Contact Winbond for OTP feature
Contact Winbond for Block Lock feature
Lowest power consumption
Read: 25mA(typ.)
Program/Erase: 25mA(typ.)
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
63-ball VFBGA
4Gb SLC NAND Flash Memory with uniform 2KB+64B page size.
Bus Width: x8
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
Support OTP Memory Area
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
Support OTP Memory Area
Atributo | Valor |
|---|---|
| Tamaño de la Memoria | 4Gbit |
| Tipo de Interfaz | Paralelo |
| Tipo de Encapsulado | VFBGA |
| Conteo de Pines | 63 |
| Organización | 512M x 8 bit |
| Tipo de Montaje | Montaje superficial |
| Tipo de Célula | SLC NAND |
| Tensión de Alimentación de Funcionamiento Mínima | 2.7 V |
| Tensión de Alimentación Máxima de Funcionamiento | 3.6 V |
| Longitud | 11.1mm |
| Altura | 0.6mm |
| Ancho | 9.1mm |
| Dimensiones | 11.1 x 9.1 x 0.6mm |
| Temperatura de Funcionamiento Mínima | -40 °C |
| Tiempo de Acceso Aleatorio Máximo | 25µs |
| Número de Bits de Palabra | 8bit |
| Temperatura Máxima de Funcionamiento | +85 °C |
| Número de Palabras | 512M |
| Serie | W29N |