Memoria flash, Paralelo W29N08GZBIBA 8Gbit, 1024K x 8 bit, 25μs, VFBGA, 63 pines

Density : 8Gbit (2 chip stacked solution)
Vcc : 1.7V to 1.95V
Bus width : x8/x16
Operating temperature
Industrial: -40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 8G-bit/1G-byte
Page size
2,112 bytes (2048 + 64 bytes)
1,056 words (1024 + 32 words)
Block size
64 pages (128K + 4K bytes)
64 pages (64K + 2K words)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 35ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command set
Additional command support
Copy Back
Two-plane operation
Contact Winbond for OTP feature
Contact Winbond for Block Lock feature
Lowest power consumption
Read: 13mA(typ.)
Program/Erase: 13mA(typ.)
CMOS standby: 20uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
63-ball VFBGA

8Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
Support OTP Memory Area