Transistor, STB13007DT4, NPN 16 A 700 V D2PAK (TO-263), 3 pines, Simple

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure to enhance switching speeds.

Fully characterized at 125 ˚C
Very high switching speed
Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range
Integrated free-wheeling diode
High voltage capability
Minimum lot-to-lot spread for reliable operation
Large RBSOA
Low spread of dynamic parameters
Applications
Electronic transformers for halogen lamps
Switch mode power supplies