Memoria flash, Paralelo S70GL02GS12FHIV20 2Gbit, 128M x 16 bit, BGA, 64 pines

CMOS 3.0 Volt Core with Versatile I/O™
Two 1024 Megabit (S29GL01GS) in a single 64-ball Fortified-BGA package
65 nm MirrorBit Eclipse™ process technology
Single supply (VCC) for read / program / erase (2.7V to 3.6V)
Versatile I/O Feature
Wide I/O voltage (VIO): 1.65V to VCC
x16 data bus
16-word/32-byte page read buffer
512-byte Programming Buffer
Programming in Page multiples, up to a maximum of 512 bytes
Sector Erase
Uniform 128-Kbytes sectors
S70GL02GS: two thousand forty-eight sectors
Suspend and Resume commands for Program and Erase operations to determine device status
Advanced Sector Protection (ASP)
Volatile and non-volatile protection methods for each sector
Separate 1024-bye One Time Program (OTP) array with two lockable regions
Available in each device Support for CFI (Common Flash Interface)
WP# input
Protects first or last sector, or first and last sectors of each device, regardless of sector protection settings
Industrial temperature range (–40°C to +85°C)
100,000 erase cycles per sector typical
20-year data retention typical
Packaging Options
64-ball LSH Fortified BGA, 13 mm  11 mm