Memoria flash, Paralelo S29GL064S70TFI030 64Mbit, 8M x 8 bit, TSOP, 48 pines

Architectural Advantages
Single Power Supply Operation
Manufactured on 65 nm MirrorBit Process Technology
Secure SiliconRegion
128-word/256-byte sector for permanent, secure identification through an 8-word / 16-byte random
Electronic Serial Number, accessible through a command sequence
Programmed and locked at the factory or by the customer
Flexible Sector Architecture
64 Mb (uniform sector models): One hundred twenty-eight32-kword (64-kB) sectors
64 Mb (boot sector models): One hundred twenty-seven32-kword (64-kB) sectors + eight 4kword (8kB) bootsectors
Automatic Error Checking and Correction (ECC) - internal hardware ECC with single bit error correction
Enhanced Versatile I/O Control
All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC
Compatibility with JEDEC Standards
Provides pinout and software compatibility for single-powersupply flash, and superior inadvertent write protection
100,000 Erase Cycles per Sector Minimum
20-year Data Retention Typical
Performance Characteristics
High Performance
70 ns access time
8-word / 16-byte page read buffer
15 ns page read time
128-word / 256-byte write buffer which reduces overall programming time for multiple-word updates
Low Power Consumption
25 mA typical initial read current @ 5 MHz
7.5 mA typical page read current @ 33 MHz
50 mA typical erase / program current
40 μA typical standby mode current
Package Options
48-pin TSOP
56-pin TSOP
64-ball Fortified BGA (LAA064 13 mm 11 mm  1.4 mm)(LAE064 9 mm  9 mm  1.4 mm)
48-ball fine-pitch BGA (VBK048 8.15 mm  6.15 mm 1.0 mm)
Temperature Range
Industrial (40°C to +85°C)
Industrial Plus (40°C to +105°C)