- Código RS:
- 188-2651
- Referência do fabricante:
- W949D2DBJX5I
- Fabricante:
- Winbond
60 Disponível para entrega em 24/48 horas
Adicionado
Preço unitário (Fornecido em múltiplos de 5)
2,962 €
Unidades | Por unidade | Por Pack* |
5 + | 2,962 € | 14,81 € |
*preço indicativo |
- Código RS:
- 188-2651
- Referência do fabricante:
- W949D2DBJX5I
- Fabricante:
- Winbond
Documentação Técnica
Legislação e Conformidade
Detalhes do produto
VDD = 1.7∼1.95V
VDDQ = 1.7∼1.95V
Data width: x16 / x32
Clock rate: 200MHz (-5),166MHz (-6)
Standard Self Refresh Mode
Partial Array Self-Refresh(PASR)
Auto Temperature Compensated Self Refresh (ATCSR)
Power Down Mode
Deep Power Down Mode (DPD Mode)
Programmable output buffer driver strength
Four internal banks for concurrent operation
Data mask (DM) for write data
Clock Stop capability during idle periods
Auto Pre-charge option for each burst access
Double data rate for data output
Differential clock inputs (CK and CK)
Bidirectional, data strobe (DQS)
CAS Latency: 2 and 3
Burst Length: 2, 4, 8 and 16
Burst Type: Sequential or Interleave
8K refresh cycles/64 mS
Interface: LVCMOS compatible
Support package:
60 balls VFBGA (x16)
90 balls VFBGA (x32)
Operating Temperature Range
Extended: -25°C ≤ TCASE ≤ 85°C
Industrial: -40°C ≤ TCASE ≤ 85°C
VDDQ = 1.7∼1.95V
Data width: x16 / x32
Clock rate: 200MHz (-5),166MHz (-6)
Standard Self Refresh Mode
Partial Array Self-Refresh(PASR)
Auto Temperature Compensated Self Refresh (ATCSR)
Power Down Mode
Deep Power Down Mode (DPD Mode)
Programmable output buffer driver strength
Four internal banks for concurrent operation
Data mask (DM) for write data
Clock Stop capability during idle periods
Auto Pre-charge option for each burst access
Double data rate for data output
Differential clock inputs (CK and CK)
Bidirectional, data strobe (DQS)
CAS Latency: 2 and 3
Burst Length: 2, 4, 8 and 16
Burst Type: Sequential or Interleave
8K refresh cycles/64 mS
Interface: LVCMOS compatible
Support package:
60 balls VFBGA (x16)
90 balls VFBGA (x32)
Operating Temperature Range
Extended: -25°C ≤ TCASE ≤ 85°C
Industrial: -40°C ≤ TCASE ≤ 85°C
This is a 512Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 32bits.
Burst Type: Sequential or Interleave
Standard Self Refresh Mode
PASR, ATCSR, Power Down Mode、DPD
Programmable output buffer driver strength
Four internal banks for concurrent operation
Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver
Standard Self Refresh Mode
PASR, ATCSR, Power Down Mode、DPD
Programmable output buffer driver strength
Four internal banks for concurrent operation
Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver
Especificações
Atributo | Valor |
---|---|
Tamaño de la Memoria | 512Mbit |
Organización | 64M x 8 bit |
Clase SDRAM | LPDDR |
Transmisión de Datos | 200MHZ |
Ancho del Bus de Datos | 32bit |
Ancho del Bus de Direcciones | 15bit |
Número de Bits de Palabra | 8bit |
Tiempo de Acceso Aleatorio Máximo | 5ns |
Número de Palabras | 64M |
Tipo de Montaje | Montaje superficial |
Tipo de Encapsulado | VFBGA |
Conteo de Pines | 90 |
Dimensiones | 13.1 x 8.1 x 0.65mm |
Altura | 0.65mm |
Longitud | 13.1mm |
Temperatura Máxima de Funcionamiento | +85 °C |
Tensión de Alimentación de Funcionamiento Mínima | 1.7 V |
Ancho | 8.1mm |
Tensión de Alimentación Máxima de Funcionamiento | 1.95 V |
Temperatura de Funcionamiento Mínima | -40 °C |